Semiconductor device convex source/drain region

US11004745B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Tzu-Ching Lin · Hsinchu, TW
• Chii-Horng Li · Luodong, TW
• Chien-I Kuo · Dingshanjiao, TW
• Li-Li Su · Zhubeikou, TW

Key dates

• Filing date: Dec 11, 2019
• Grant date: May 11, 2021
• Expiry date: Dec 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device is provided. The method generally includes forming a recess in a fin, the fin being on a substrate. The recess is proximate a gate structure over the fin. The method includes epitaxially growing a source/drain region in the recess using a remote plasma chemical vapor deposition (RPCVD) process. The RPCVD process includes using a silicon source precursor and a hydrogen carrier gas.