Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same
US11005034B1 · kind B1 · utility
8Cited by
7References
12Claims
0Family size
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Key dates
| Filing date | Nov 22, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Nov 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.