Inventor · San Jose, CA, US

Matthew J. Carey

78Patents
16h-index
53Co-inventors
87Inventor score

Filing activity: Aug 19, 1997 → Mar 4, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6266218A Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing Physics 116 Expired
US6280813A Magnetic recording media with antiferromagnetically coupled ferromagnetic films as the recording layer Physics 109 Expired
US7791844B2 Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction Physics 49 Active
US6686068B2 Heterogeneous spacers for CPP GMR stacks Emerging Cross-Sectional Technologies 48 Expired
US7522392B2 Magnetoresistive sensor based on spin accumulation effect with terminal connection at back end of sensor Physics 33 Active
US6835475B2 Dual-layer perpendicular magnetic recording media with laminated underlayer formed with antiferromagnetically coupled films Emerging Cross-Sectional Technologies 31 Expired
US5883763A Read/write head having a GMR sensor biased by permanent magnets located between the GMR and the pole shields Physics 27 Expired
US7298597B2 Magnetoresistive sensor based on spin accumulation effect with free layer stabilized by in-stack orthogonal magnetic coupling Electricity 24 Expired
US6452761B1 Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity Emerging Cross-Sectional Technologies 22 Expired
US6756128B2 Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier Emerging Cross-Sectional Technologies 22 Expired
US9460397B2 Quantum computing device spin transfer torque magnetic memory Electricity 22 Active
US6449134B1 Read head with file resettable dual spin valve sensor Physics 20 Expired
US6977801B2 Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer Physics 20 Expired
US6542341B1 Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer Physics 19 Expired
US7551409B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved ferromagnetic free layer structure Physics 18 Active
US8015694B2 Method for making a scissoring-type current-perpendicular-to-the-plane (CPP) magnetoresistive sensor Emerging Cross-Sectional Technologies 17 Active
US7382586B2 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer Electricity 16 Active
US8416539B2 Magnetic field sensing system using spin-torque diode effect Electricity 16 Active
US6836392B2 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems Physics 14 Expired
US8233247B2 Scissoring-type current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensors with damped free layer structures Physics 13 Active
US7363699B2 Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers Emerging Cross-Sectional Technologies 10 Active
US7199984B2 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stack orthogonal magnetic coupling Electricity 9 Expired
US7558028B2 Magnetic head with improved CPP sensor using Heusler alloys Physics 9 Active
US8576519B1 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with magnetic damping material at the sensor edges Electricity 9 Active
US10991407B1 Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same Electricity 9 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.