Bit line voltage control for damping memory programming
US11011242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2020 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Mar 25, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a programming circuit configured to supply a program pulse to increase a threshold voltage of a memory cell. The apparatus also includes a sensing circuit configured to determine that the threshold voltage of the memory cell satisfies a trigger threshold voltage in response to the program pulse. The apparatus further includes a damping circuit configured to increase a voltage of a bit line connected to the memory cell after initiation of and during a second program pulse in response to the threshold voltage of the memory cell satisfying the trigger threshold voltage, the second program pulse being sent by the programming circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.