High-current ion implanter and method for controlling ion beam using high-current ion implanter
US11011343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2019 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Aug 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24585
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.