Scanning electron microscope and sample observation method using scanning electron microscope
US11011348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2017 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Mar 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/281
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy. Therefore, in the scanning electron microscope that includes an electron source 201 that emits a primary electron, a sample stage 213 on which a sample is placed, a deflector 207 that causes the sample to be scanned with the primary electron, an objective lens 203 that focuses the primary electron on the sample, and a detector 206 that detects a secondary electron generated by irradiating the sample with the primary electron, a potential applied to the sample stage is controlled to have a negative polarity with respect to a potential applied to the objective lens during a first period in which the sample is irradiated with the primary electron, and the potential applied to the sample stage is controlled to have a positive polarity with respect to the potential applied to the objective lens during a second period in which the sample is not irradiated with the primary electron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.