Atom implantation for reduction of compressive stress
US11011378B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jul 1, 2019 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Jul 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems, apparatuses, and methods related to atom implantation for reduction of compressive stress are described. An example method may include patterning a working surface of a semiconductor, the working surface having a hard mask material formed over a dielectric material and forming a material having a lower refractive index (RI), relative to a RI of the hard mask material, over the hard mask material. The method may further include implanting atoms through the lower RI material and into the hard mask material to reduce the compressive stress in the hard mask material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.