Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching
US11011388B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2019 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Nov 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.