Kwame Eason
5Patents
2h-index
10Co-inventors
37Inventor score
Filing activity: Nov 11, 2015 → Mar 7, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11011388B2 | Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching | Electricity | 6 | Active |
| US10147588B2 | System and method for increasing electron density levels in a plasma of a substrate processing system | Electricity | 3 | Active |
| US10283615B2 | Ultrahigh selective polysilicon etch with high throughput | Electricity | 2 | Active |
| US11469079B2 | Ultrahigh selective nitride etch to form FinFET devices | Electricity | 1 | Active |
| US10276398B2 | High aspect ratio selective lateral etch using cyclic passivation and etching | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.