Patent · US Active

Devices with backside metal structures and methods of formation thereof

US11011409B2 · kind B2 · utility

1Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Oliver Hellmund · Straubing, DE
Ingo Muri · Villach, AT
Johannes Baumgartl · Arnoldstein, AT
Iris Moder · Villach, AT
Thomas Neidhart · Klagenfurt, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Nov 26, 2019
Grant date	May 18, 2021
Priority date	—
Expiry date	Nov 26, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first epitaxial layer, a second epitaxial layer disposed below the first epitaxial layer, a conductive layer disposed below and directly contacting the second epitaxial layer, and a plurality of spacers disposed between the second epitaxial layer and the conductive layer. The conductive layer includes a metal. The plurality of spacers include a bulk semiconductor material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.