Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same
US11018001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2020 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Jul 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.