Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11018002B2 · kind B2 · utility
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Key dates
| Filing date | Jun 5, 2018 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Jun 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The method may further include, exposing the substrate to at least one Group IV precursor, and exposing the substrate to at least one Group IIIA halide dopant precursor. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.