Patent · US Active

Integrated circuit structure

US11018103B2 · kind B2 · utility

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11Claims

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Assignee

NANYA TECHNOLOGY CORPORATION · TW

Inventors

Chien-Chung Wang · New Taipei, TW
Hsih-Yang Chiu · Taoyuan, TW

Key dates

Filing date	Sep 19, 2019
Grant date	May 25, 2021
Priority date	—
Expiry date	Oct 18, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/014
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit structure includes a substrate, a metal pad, a first passivation layer, a second passivation layer, and a conductive bump. The metal pad is over the substrate. The metal pad includes a probing portion and a bumping portion laterally connected to the probing region. The first passivation layer is over the metal pad. The second passivation layer is over the first passivation layer and has an opening. The bumping portion is in the opening. The conductive bump is in the opening of the second passivation layer and contacts the probing portion. The probing portion and the conductive bump are separated by the first passivation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.