Method of fabricating semiconductor device
US11018132B2 · kind B2 · utility
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6References
7Claims
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Assignee
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Key dates
| Filing date | Apr 10, 2019 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Apr 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes the steps of providing a semiconductor substrate; forming a tunnel dielectric on the semiconductor substrate; forming a floating gate on the tunnel dielectric; forming an insulation layer conformally disposed on the top surface and the sidewall surface of the floating gate; forming a control gate disposed on the insulation layer and the floating gate; and forming a spacer continuously distributed on the sidewall surfaces of the floating gate and the control gate, where the spacer overlaps portions of the top surface of the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.