Semiconductor device and method for manufacturing the same
US11018134B2 · kind B2 · utility
4Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 26, 2017 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Sep 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/08
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes a first transistor, a first interconnect structure, and a second transistor. The first transistor has a first gate length. The first interconnect structure is over the first transistor. The second transistor is over the first interconnect structure. The second transistor is electrically coupled to the first transistor through the first interconnect structure. The second transistor has a second gate length, and the first gate length is shorter than the second gate length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.