Patent · US Active

Non-volatile memory structure with positioned doping

US11018295B2 · kind B2 · utility

2Cited by

7References

18Claims

0Family size

Assignee

Hefei Reliance Memory Limited · CN

Inventors

Zhichao Lu · San Jose, US
Gary B. Bronner · Stormville, US

Key dates

Filing date	Nov 13, 2017
Grant date	May 25, 2021
Priority date	—
Expiry date	Jan 7, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/51
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Disclosed is a resistive random access memory (RRAM). The RRAM includes a bottom electrode made of tungsten and a switching layer made of hafnium oxide disposed above the bottom electrode, wherein the switching layer includes a filament and one or more lateral regions including a doping material that are between a top region and a bottom region of the switching layer. The RRAM further includes a top electrode disposed above the switching layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.