Patent · US Active

Memory system and operation method thereof

US11024402B2 · kind B2 · utility

1Cited by
1References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateApr 8, 2020
Grant dateJun 1, 2021
Priority date
Expiry dateApr 8, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/0411
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory system may include: an error correction code (ECC) generation circuit suitable for generating an M-bit error correction code using N-bit data, where N and M are positive integers; a memory core suitable for storing the N-bit data and the M-bit error correction code; and an ECC circuit suitable for correcting an error of the N-bit data read from the memory core, using the M-bit error correction code read from the memory core, wherein the ECC generation circuit generates the M-bit error correction code using an M×(N+M) check matrix, wherein one column vector among M column vectors corresponding to the M-bit error correction code in the M×(N+M) check matrix has an odd weight, and the other M column vectors have even weights.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.