Bottom-up gap-fill by surface poisoning treatment

US11028477B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Mark Saly · Santa Clara, US
• Keiichi Tanaka · Toyama, JP
• Eswaranand Venkatasubramanian · Santa Clara, US
• Mandyam Sriram · Beaverton, US
• Bhaskar Jyoti Bhuyan · San Jose, US
• Pramit Manna · Sunnyvale, US
• David Thompson · San Jose, US
• Andrew Short · San Francisco, US

Key dates

• Filing date: Oct 19, 2016
• Grant date: Jun 8, 2021
• Expiry date: Oct 19, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76224
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for depositing film comprising exposing a substrate surface to an organic-based poisoning agent to preferentially inhibit film growth at the top of a feature relative to the bottom of the feature and depositing a film. The substrate can be exposed to the poisoning agent any number of times to promote bottom-up growth of the film in the feature.