Methods for depositing a boron doped silicon germanium film
US11031242B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 7, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Nov 7, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing a boron doped silicon germanium (Si1-xGex) film is disclosed. The method may include: providing a substrate within a reaction chamber; heating the substrate to a deposition temperature; flowing a silicon precursor, a germanium precursor, and a halide gas into the reaction chamber through a first gas injector; flowing a boron dopant precursor into the reaction chamber through a second gas injector independent from the first gas injector; contacting the substrate with the silicon precursor, the germanium precursor, the halide gas and the boron dopant precursor; and depositing the boron doped silicon germanium (Si1-xGex) film over a surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.