Patent · US Active

Semiconductor devices having silicon/germanium active regions with different germanium concentrations

US11031406B2 · kind B2 · utility

1Cited by

5References

20Claims

0Family size

Assignee

GLOBALFOUNDRIES U.S. Inc. · US

Inventors

Elliot John Smith · Dresden, DE
Gunter Grasshoff · Radebeul, DE
Carsten Peters · Dresden, DE

Key dates

Filing date	May 20, 2019
Grant date	Jun 8, 2021
Priority date	—
Expiry date	May 20, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31111
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first transistor element having a first channel region and a second transistor element having a second channel region, wherein the first channel region includes a first crystalline silicon/germanium (Si/Ge) material mixture having a first germanium concentration, and wherein the second channel region includes a second crystalline Si/Ge material mixture having a second germanium concentration that is higher than the first germanium concentration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.