Silicon carbide superjunction power semiconductor device and method for manufacturing the same

US11031473B2 · kind B2 · utility

Assignee

• ABB Power Grids Switzerland AG · CH

Inventors

• Friedhelm Bauer · Suhr, CH
• Lars Knoll · Cokeville Municipal Airport access, CH
• Marco Bellini · Schlieren, CH
• Renato Minamisawa · Windisch, CH
• Umamaheswara Vemulapati · Windisch, CH

Key dates

• Filing date: Sep 3, 2019
• Grant date: Jun 8, 2021
• Expiry date: Oct 7, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/343

Abstract

A power semiconductor device includes a semiconductor wafer having a first main side surface and a second main side surface. The semiconductor wafer includes a first semiconductor layer having a first conductivity type and a plurality of columnar or plate-shaped first semiconductor regions extending in the first semiconductor layer between the first main side surface and the second main side surface in a vertical direction perpendicular to the first main side surface and the second main side surface. The first semiconductor regions have a second conductivity type, which is different from the first conductivity type. Therein, the first semiconductor is a layer of hexagonal silicon carbide. The first semiconductor regions are regions of 3C polytype silicon carbide.