Actively tracking switching speed control of a power transistor

US11031929B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Robert Maier · Babenhausen, DE
• Mark-Matthias Bakran · Erlangen, DE
• Daniel Domes · Schwäbisch Hall, DE
• Zheming Li · Bayreuth, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE

Key dates

• Filing date: Jul 30, 2020
• Grant date: Jun 8, 2021
• Expiry date: Jul 30, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K2217/0036
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

A method of driving a transistor includes generating an off-current during a plurality of turn-off switching events to control a gate voltage at a gate terminal of the transistor, wherein generating the off-current includes sinking a first portion of the off-current from the gate terminal to discharge a first portion of the gate voltage, and sinking, during a boost interval, a second portion of the off-current from the gate terminal to discharge a second portion of the gate voltage; measuring a transistor parameter indicative of an oscillation of a drain-source voltage of the transistor for a first turn-off switching event during which the transistor is transitioned off; activating the first portion of the off-current for a second turn-off switching event; and activating the second portion of the off-current for the second turn-off switching event, including regulating a length of the boost interval based on the measured transistor parameter.