Daniel Domes
29Patents
6h-index
29Co-inventors
65Inventor score
Filing activity: Jul 7, 2008 → Jul 12, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8228113B2 | Power semiconductor module and method for operating a power semiconductor module | Electricity | 25 | Active |
| US8441128B2 | Semiconductor arrangement | Electricity | 21 | Active |
| US8487407B2 | Low impedance gate control method and apparatus | Electricity | 11 | Active |
| US8155916B2 | Semiconductor component and method of determining temperature | Electricity | 8 | Active |
| US9106124B2 | Low-inductance power semiconductor assembly | Electricity | 8 | Active |
| US8637964B2 | Low stray inductance power module | Electricity | 8 | Active |
| US8787003B2 | Low inductance capacitor module and power system with low inductance capacitor module | Electricity | 6 | Active |
| US8729566B2 | Semiconductor switching arrangement having a normally on and a normally off transistor | Electricity | 4 | Active |
| US8729914B2 | Detection of the conduction state of an RC-IGBT | Electricity | 4 | Active |
| US9147637B2 | Module including a discrete device mounted on a DCB substrate | Electricity | 3 | Active |
| US11538725B2 | Semiconductor module arrangement | Electricity | 2 | Active |
| US11444613B1 | Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on | Electricity | 2 | Active |
| US10475909B2 | Electric assembly including a bipolar switching device and a wide bandgap transistor | Electricity | 2 | Active |
| US8471600B2 | Detection of the zero crossing of the load current in a semiconductor device | Electricity | 2 | Active |
| US11031929B1 | Actively tracking switching speed control of a power transistor | Electricity | 2 | Active |
| US12088283B2 | Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on | Electricity | 1 | Active |
| US10032755B2 | Power semiconductor arrangement having a plurality of power semiconductor switching elements and reduced inductance asymmetry | Electricity | 1 | Active |
| US9893175B2 | Integrated circuit with a power transistor and a driver circuit integrated in a common semiconductor body | Electricity | 1 | Active |
| US11595035B1 | Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistor | Electricity | 1 | Active |
| US8478559B2 | Semiconductor component and method of making the same | Electricity | 1 | Active |
| US12212309B2 | Switch module, driver circuit and related methods | Electricity | 0 | Active |
| US11973065B2 | Semiconductor arrangements | Electricity | 0 | Active |
| US9698772B2 | Drive circuit for reverse-conducting IGBTs | Electricity | 0 | Active |
| US10497684B2 | Power semiconductor arrangement having a stack of connection plates | Electricity | 0 | Active |
| US11843368B2 | Method for reducing oscillation during turn on of a power transistor by regulating the gate switching speed control of its complementary power transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.