Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof
US11035054B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Jul 1, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.