Xueping Xu
43Patents
12h-index
38Co-inventors
81Inventor score
Filing activity: Dec 20, 1995 → Mar 5, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6445006B1 | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same | Emerging Cross-Sectional Technologies | 295 | Expired |
| US5973444A | Carbon fiber-based field emission devices | Emerging Cross-Sectional Technologies | 191 | Expired |
| US6447604B1 | METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES | Electricity | 158 | Expired |
| US5872422A | Carbon fiber-based field emission devices | Emerging Cross-Sectional Technologies | 119 | Expired |
| US6488767B1 | High surface quality GaN wafer and method of fabricating same | Emerging Cross-Sectional Technologies | 116 | Expired |
| US7170095B2 | Semi-insulating GaN and method of making the same | Electricity | 81 | Expired |
| US6951695B2 | High surface quality GaN wafer and method of fabricating same | Emerging Cross-Sectional Technologies | 77 | Expired |
| US6031250A | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials | Emerging Cross-Sectional Technologies | 30 | Expired |
| US7118813B2 | Vicinal gallium nitride substrate for high quality homoepitaxy | Emerging Cross-Sectional Technologies | 22 | Expired |
| US7097707B2 | GaN boule grown from liquid melt using GaN seed wafers | Emerging Cross-Sectional Technologies | 15 | Expired |
| US8212259B2 | III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates | Electricity | 15 | Expired |
| US7777217B2 | Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same | Electricity | 13 | Active |
| US7897490B2 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Electricity | 11 | Active |
| US8435879B2 | Method for making group III nitride articles | Electricity | 9 | Active |
| US7323256B2 | Large area, uniformly low dislocation density GaN substrate and process for making the same | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6617772B1 | Flat-panel display having spacer with rough face for inhibiting secondary electron escape | Electricity | 8 | Expired |
| US6356014B2 | Electron emitters coated with carbon containing layer | Electricity | 7 | Expired |
| US6268229A | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7879147B2 | Large area, uniformly low dislocation density GaN substrate and process for making the same | Emerging Cross-Sectional Technologies | 6 | Active |
| US6379210B2 | Fabrication of electron emitters coated with material such as carbon | Electricity | 5 | Expired |
| US7390581B2 | Vicinal gallium nitride substrate for high quality homoepitaxy | Emerging Cross-Sectional Technologies | 5 | Expired |
| US8349711B2 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Electricity | 4 | Active |
| US9090989B2 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Electricity | 4 | Active |
| US8741413B2 | Large diameter, high quality SiC single crystals, method and apparatus | Emerging Cross-Sectional Technologies | 3 | Active |
| US8202793B2 | Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.