Avinash Gupta
38Patents
7h-index
30Co-inventors
69Inventor score
Filing activity: Sep 26, 1975 → Oct 3, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5219671A | Hydrogen generation and utility load leveling system and the method therefor | Emerging Cross-Sectional Technologies | 23 | Expired |
| US8287720B2 | Multistage resid hydrocracking | Chemistry; Metallurgy | 13 | Active |
| US7608524B2 | Method of and system for forming SiC crystals having spatially uniform doping impurities | Emerging Cross-Sectional Technologies | 12 | Active |
| US7767022B1 | Method of annealing a sublimation grown crystal | Chemistry; Metallurgy | 10 | Active |
| US3982956A | Process for the purification of impure sugar juice | Chemistry; Metallurgy | 9 | Expired |
| US5186794A | Alkali metal hydroxide generation system and the method therefor | Emerging Cross-Sectional Technologies | 8 | Expired |
| US8216369B2 | System for forming SiC crystals having spatially uniform doping impurities | Emerging Cross-Sectional Technologies | 8 | Active |
| US10294584B2 | SiC single crystal sublimation growth method and apparatus | Chemistry; Metallurgy | 7 | Active |
| US8512471B2 | Halosilane assisted PVT growth of SiC | Chemistry; Metallurgy | 7 | Active |
| US8858709B1 | Silicon carbide with low nitrogen content and method for preparation | Chemistry; Metallurgy | 6 | Active |
| US8361227B2 | Silicon carbide single crystals with low boron content | Chemistry; Metallurgy | 4 | Active |
| US7903819B2 | Memory efficient storage of large numbers of key value pairs | Physics | 4 | Active |
| US9090989B2 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Electricity | 4 | Active |
| US4799357A | Closed loop regeneration system for generating mechanical energy and the method therefor | Mechanical Engineering; Lighting; Heating | 4 | Expired |
| US8313720B2 | Guided diameter SiC sublimation growth with multi-layer growth guide | Chemistry; Metallurgy | 4 | Active |
| US8741413B2 | Large diameter, high quality SiC single crystals, method and apparatus | Emerging Cross-Sectional Technologies | 3 | Active |
| US7547360B2 | Reduction of carbon inclusions in sublimation grown SiC single crystals | Chemistry; Metallurgy | 2 | Active |
| USRE46315E1 | Large diameter, high quality SiC single crystals, method and apparatus | General | 2 | Active |
| US10793972B1 | High quality silicon carbide crystals and method of making the same | Chemistry; Metallurgy | 1 | Active |
| US9322110B2 | Vanadium doped SiC single crystals and method thereof | Chemistry; Metallurgy | 1 | Active |
| US9017629B2 | Intra-cavity gettering of nitrogen in SiC crystal growth | Electricity | 1 | Active |
| US11035054B2 | Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof | Emerging Cross-Sectional Technologies | 1 | Active |
| US9523048B2 | Pre-sulfiding and pre-conditioning of residuum hydroconversion catalysts for ebullated-bed hydroconversion processes | Chemistry; Metallurgy | 0 | Active |
| US12020207B2 | Canonical model for product development | Emerging Cross-Sectional Technologies | 0 | Active |
| US9873839B2 | Multistage resid hydrocracking | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.