In-situ plasma cleaning of process chamber components
US11037758B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Dec 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.