Methods and apparatus for controlling ion fraction in physical vapor deposition processes
US11037768B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2017 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Mar 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76871
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.