Patent · US Active

Gas residue removal

US11037779B2 · kind B2 · utility

0Cited by
4References
10Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 19, 2017
Grant dateJun 15, 2021
Priority date
Expiry dateDec 19, 2037

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C1/00849
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.