Method of plasma etching
US11037793B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Jun 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the invention there is provided a method of plasma etching a silicon-based compound semiconductor substrate, the method comprising providing the substrate within an etch chamber and performing a cyclical process on the substrate, each cycle comprising supplying an etchant gas into the chamber, energising the gas into a plasma, and performing an etch step on the substrate using the plasma; and performing a desorption step, wherein during the desorption step, the only gas that is supplied into the etch chamber is an inert gas, so as to allow reactive species that have adsorbed to the surface of the substrate during the etch step to desorb from the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.