Selective removal process to create high aspect ratio fully self-aligned via
US11037825B2 · kind B2 · utility
0Cited by
32References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2020 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Sep 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76883
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatuses and methods to provide a fully self-aligned via are described. Some embodiments of the disclosure utilize a cap layer to protect an insulating layer in order to minimize bowing of the side walls during metal recess in a fully self-aligned via. The cap layer can be selectively removed, thus increasing the aspect ratio, by exposing the substrate to a hot phosphoric acid solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.