Semiconductor package structure and method of manufacturing the same
US11037853B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Dec 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06589
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor heat dissipation structure includes a first semiconductor device including a first active surface and a first back surface opposite to the first active surface, a second semiconductor device including a second active surface and a second back surface opposite to the second active surface, a first heat conductive layer embedded in the first back surface of the first semiconductor device, a second heat conductive layer embedded in the second back surface of the second semiconductor device, and a third heat conductive layer disposed adjoining the first heat conductive layer and extending to the first active surface of the first semiconductor device. The first back surface of the first semiconductor device and the second back surface of the second semiconductor device are in contact with each other. At least a portion of the first heat conductive layer are in contact with the second heat conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.