Plasma etch singulated semiconductor packages and related methods
US11037903B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2016 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Feb 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54453
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a plurality of semiconductor packages includes providing an array of unsingulated semiconductor packages that are at least partially encapsulated in an encapsulant. The array of unsingulated semiconductor packages may be coupled with a lead frame or a substrate. A first plurality of singulation lines are simultaneously etched in the encapsulant through slits in an etch mask using a plasma etching process and a fixture coupled with the array. A second plurality of parallel singulation lines may also be etched. The first and second pluralities of singulation lines may include substantially straight or arcuate lines. The second plurality of parallel singulation lines may be substantially perpendicular to the first plurality of parallel singulation lines and be formed using the plasma etching process, the fixture, and an etch mask. The formation of singulation lines in the array singulates the array into a plurality of singulated semiconductor packages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.