SRAM bit cells formed with dummy structures

US11037937B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Meixiong Zhao · Ballston Lake, US
• Randy W. Mann · Jericho, US
• Sanjay R. Parihar · Austin, US
• Anton V. Tokranov · Cohoes, US
• Hong Yu · Rexford, US
• Hongliang Shen · Ballston Lake, US
• Guoxiang Ning · Clifton Park, US

Key dates

• Filing date: Nov 20, 2019
• Grant date: Jun 15, 2021
• Expiry date: Nov 20, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

Structures including static random access memory bit cells and methods of forming a structure including static random access memory bit cells. A first bit cell includes a first plurality of semiconductor fins, and a second bit cell includes a second plurality of semiconductor fins. A deep trench isolation region is laterally positioned between the first plurality of semiconductor fins of the first bit cell and the second plurality of semiconductor fins of the second bit cell.