Patent · US Active

III-nitride material semiconductor structures on conductive silicon substrates

US11038023B2 · kind B2 · utility

2Cited by
85References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 19, 2018
Grant dateJun 15, 2021
Priority date—
Expiry dateJul 19, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/343
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

III-nitride materials are described herein, including material structures comprising III-nitride material regions (e.g., gallium nitride material regions). In certain cases, the material structures also comprise substrates having relatively high electrical conductivities. Certain embodiments include one or more features that reduce the degree to which thermal runaway occurs, which can enhance device performance including at elevated flange temperatures. Some embodiments include one or more features that reduce the degree of capacitive coupling exhibited during operation. For example, in some embodiments, relatively thick III-nitride material regions and/or relatively small ohmic contacts are employed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.