Inventor · Franklin, MA, US

Wayne Mack Struble

36Patents
6h-index
25Co-inventors
69Inventor score

Filing activity: Sep 5, 1996 → Mar 15, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7263337B2 Circuit for boosting DC voltage Electricity 67 Expired
US6429504B1 Multilayer spiral inductor and integrated circuits incorporating the same Electricity 36 Expired
US6127886A Switched amplifying device Electricity 24 Expired
US6351183B1 Switched amplifying device Electricity 11 Expired
US5903177A Compensation network for pinch off voltage sensitive circuits Electricity 11 Expired
US6828658B2 Package for integrated circuit with internal matching Electricity 7 Expired
US7532066B1 Bias network with stable transient response Electricity 6 Active
US10950598B2 Heterolithic microwave integrated circuits including gallium-nitride devices formed on highly doped semiconductor Electricity 3 Active
US11056483B2 Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor Electricity 3 Active
US9209744B1 Laminate-based voltage-controlled oscillator Electricity 3 Active
US6903447B2 Apparatus, methods and articles of manufacture for packaging an integrated circuit with internal matching Electricity 2 Expired
US11038023B2 III-nitride material semiconductor structures on conductive silicon substrates Electricity 2 Active
US11158575B2 Parasitic capacitance reduction in GaN-on-silicon devices Electricity 2 Active
US11233047B2 Heterolithic microwave integrated circuits including gallium-nitride devices on highly doped regions of intrinsic silicon Electricity 1 Active
US11961888B2 Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices Electricity 1 Active
US9876082B2 Transistor with hole barrier layer Electricity 1 Active
US9374037B2 Voltage-controlled oscillator with mask-selectable performance Electricity 1 Active
US7030515B2 Individually biased transistor high frequency switch Electricity 1 Expired
US12113484B2 High voltage stacked transistor amplifier Electricity 0 Active
US12363983B2 Layout techniques and optimization for power transistors Electricity 0 Active
US12112983B2 Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device Electricity 0 Active
US11942518B2 Reduced interfacial area III-nitride material semiconductor structures Electricity 0 Active
US9391561B1 Laminate-based voltage-controlled oscillator Electricity 0 Active
US11600614B2 Microwave integrated circuits including gallium-nitride devices on silicon Electricity 0 Active
US11640960B2 Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.