Semiconductor device and manufacturing method

US11038028B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ingo Muri · Villach, AT
• Johannes Baumgartl · Arnoldstein, AT
• Oliver Hellmund · Straubing, DE
• Jacob Tillmann Ludwig · Villach, AT
• Iris Moder · Villach, AT
• Thomas Neidhart · Klagenfurt, AT
• Gerhard Schmidt · Graz, AT
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: May 8, 2019
• Grant date: Jun 15, 2021
• Expiry date: May 8, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a semiconductor device includes providing a semiconductor substrate having opposing first and second main surfaces and first and second dopants. A covalent atomic radius of a material of the substrate is i) larger than a covalent atomic radius of the first dopant and smaller than that of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than that of the second dopant. A vertical extension of the first dopant into the substrate from the first main surface ends at a bottom of a substrate portion at a first vertical distance to the first main surface. The method further includes forming a semiconductor layer on the first main surface, forming semiconductor device elements in the semiconductor layer, and reducing a thickness of the substrate by removing material from the second main surface at least up to the substrate portion.