Chamfered silicon carbide substrate and method of chamfering

US11041254B2 · kind B2 · utility

Assignee

• SiCrystal GMBH · DE

Inventors

• Michael Vogel · Nuremberg, DE
• Bernhard Ecker · Nuremberg, DE
• Ralf Müller · Geringswalde, DE
• Arnd-Dietrich Weber · Forchheim, DE
• Matthias Stockmeier · Egloffstein, DE

Key dates

• Filing date: May 10, 2019
• Grant date: Jun 22, 2021
• Expiry date: May 10, 2039

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B24B37/042
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate (100) comprises a main surface (102) and a circumferential end face surface (114) which is essentially perpendicular to the main surface (102), and a chamfered peripheral region (110), wherein a first bevel surface (106) of the chamfered peripheral region (110) includes a first bevel angle (a1) with said main surface (102), and wherein a second bevel surface (108) of the chamfered peripheral region (110) includes a second bevel angle (a2) with said end face surface (114), wherein, in more than 75% of the peripheral region, said first bevel angle (a1) has a value in a range between 20° and 50°, and said second bevel angle (a2) has a value in a range between 45° and 75°.