Bernhard Ecker
6Patents
1h-index
5Co-inventors
33Inventor score
Filing activity: Mar 7, 2018 → Dec 7, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11236438B2 | Silicon carbide substrate and method of growing SiC single crystal boules | Chemistry; Metallurgy | 1 | Active |
| US11261536B2 | Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density | Chemistry; Metallurgy | 0 | Active |
| US11515140B2 | Chamfered silicon carbide substrate and method of chamfering | Emerging Cross-Sectional Technologies | 0 | Active |
| US11041254B2 | Chamfered silicon carbide substrate and method of chamfering | Performing Operations; Transporting | 0 | Active |
| US11624124B2 | Silicon carbide substrate and method of growing SiC single crystal boules | Emerging Cross-Sectional Technologies | 0 | Active |
| US11781245B2 | Silicon carbide substrate and method of growing SiC single crystal boules | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.