High-density low temperature carbon films for hardmask and other patterning applications
US11043372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2018 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | May 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.