Techniques to engineer nanoscale patterned features using ions
US11043380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2018 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | May 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.