Methods and apparatus for processing a substrate

US11043387B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Kartik Ramaswamy · San Jose, US
• Yang Yang · San Diego, US
• Kenneth S. Collins · San Jose, US
• Steven Lane · Porterville, US
• Gonzalo Monroy · San Francisco, US
• Yue Guo · Redwood City, US

Key dates

• Filing date: Oct 30, 2019
• Grant date: Jun 22, 2021
• Expiry date: Oct 30, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/3341
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.