Techniques and apparatus for selective shaping of mask features using angled beams
US11043394B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Dec 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.