Semiconductor device and fabrication method thereof
US11043596B2 · kind B2 · utility
0Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2019 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Jun 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device is disclosed. A substrate having at least two fins thereon and an isolation trench between the at least two fins is provided. A liner layer is then deposited on the substrate. The liner layer conformally covers the two fins and interior surface of the isolation trench. A stress-buffer film is then deposited on the liner layer. The stress-buffer film completely fills a lower portion that is located at least below half of a trench depth of the isolation trench. A trench-fill oxide layer is then deposited to completely fill an upper portion of the isolation trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.