Shih-Wei Su
17Patents
1h-index
22Co-inventors
46Inventor score
Filing activity: Jun 25, 2019 → Sep 6, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12089512B2 | Semiconductor structure | Electricity | 1 | Active |
| US11793091B2 | Semiconductor structure and manufacturing method thereof | Electricity | 1 | Active |
| US11581438B2 | Fin structure for fin field effect transistor and method for fabrication the same | Electricity | 0 | Active |
| US11043596B2 | Semiconductor device and fabrication method thereof | Electricity | 0 | Active |
| US12108691B2 | Manufacturing method of memory device | Electricity | 0 | Active |
| US11462441B2 | Method for fabricating semiconductor device | Electricity | 0 | Active |
| US11688790B2 | HEMT and method of fabricating the same | Electricity | 0 | Active |
| US11723287B2 | Method of manufacturing magnetic tunnel junction (MTJ) device | Electricity | 0 | Active |
| US11707003B2 | Memory device and manufacturing method thereof | Electricity | 0 | Active |
| US11762293B2 | Fabricating method of reducing photoresist footing | Chemistry; Metallurgy | 0 | Active |
| US11862727B2 | Method for fabricating fin structure for fin field effect transistor | Electricity | 0 | Active |
| US12015076B2 | HEMT and method of fabricating the same | Electricity | 0 | Active |
| US12376323B2 | Semiconductor structure and the forming method thereof | Electricity | 0 | Active |
| US11495737B2 | Magnetic tunnel junction (MTJ) device | Electricity | 0 | Active |
| US11114612B2 | Magnetoresistive random access memory and method for fabricating the same | Electricity | 0 | Active |
| US11688802B2 | High electron mobility transistor and fabrication method thereof | Electricity | 0 | Active |
| US11189793B2 | Method of forming resistive random access memory cell | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.