Tungsten silicide target and method of manufacturing same
US11046616B2 · kind B2 · utility
1Cited by
11References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 22, 2018 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Jan 22, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/79
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm2 on the sputtering surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.