Optical proximity correction methodology using pattern classification for target placement
US11048161B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Dec 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Optical proximity correction (OPC) based computational lithography techniques are disclosed herein for enhancing lithography printability. An exemplary mask optimization method includes receiving an integrated circuit (IC) design layout having an IC pattern; generating target points for a contour corresponding with the IC pattern based on a target placement model, wherein the target placement model is selected based on a classification of the IC pattern; and performing an OPC on the IC pattern using the target points, thereby generating a modified IC design layout. The method can further include fabricating a mask based on the modified IC design layout. The OPC can select an OPC model based on the classification of the IC pattern. The OPC model can weight the target placement model.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.