Gap fill using carbon-based films

US11049716B2 · kind B2 · utility

Assignee

• Lam Research Corporation · US

Inventors

• Wei Tang · Fremont, US
• Jason D. Park · Lake Oswego, US
• Bart J. van Schravendijk · Sunnyvale, US
• Shu Tsai Wang · Dublin, US
• Kaihan Ashtiani · San Jose, US

Key dates

• Filing date: Nov 16, 2018
• Grant date: Jun 29, 2021
• Expiry date: Nov 16, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76837
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods may involve using high hydrogen-content process gasses during HDP CVD deposition to provide bottom-up fill. Also provided are related apparatus.