Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal

US11049719B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Lara Hawrylchak · Gilroy, US
• Kin Pong Lo · Fremont, US
• Errol C. Sanchez · Tracy, US
• Schubert S. Chu · San Francisco, US
• Tushar Mandrekar · Santa Clara, US

Key dates

• Filing date: Aug 7, 2018
• Grant date: Jun 29, 2021
• Expiry date: Dec 22, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02546
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.