Patent · US Active

Semiconductor substrate supports with embedded RF shield

US11049755B2 · kind B2 · utility

3Cited by
1,002References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 14, 2018
Grant dateJun 29, 2021
Priority date
Expiry dateApr 18, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67167
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.